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| (R) STTH806DTI Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) trr (typ.) FEATURES AND BENEFITS s 8A 600 V 150 C 2.4 V 4A 13 ns 1 2 2 1 Insulated TO-220AB s s s s s ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET AND FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN PACKAGE CAPACITANCE: C=7pF DESCRIPTION The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFSM Ipeak Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Peak current waveform Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal = 0.15 Tc = 130C Value 600 14 80 17 -65 +150 + 150 Unit V A A A C C October 2003 - Ed: 2A 1/5 STTH806DTI THERMAL AND POWER DATA Symbol Rth (j-c) Parameter Junction to case thermal resistance Test conditions Value 2.6 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions VR = VRRM Tj = 25C Tj = 125C IF = 8 A Tj = 25C Tj = 150C Pulse test : * tp = 100 ms, < 2 % ** tp = 380 s, < 2% Min. Typ. Max. 10 Unit A 15 100 3.6 V VF ** 1.95 2.4 To evaluate the maximum conduction losses use the following equation : P = 1.7 x IF(AV) + 0.087 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Parameter Reverse recovery time Tests Conditions IF = 0.5 A Irr = 0.25A IR = 1 A IF = 1 A dIF/dt = - 50A/s VR = 30 V IRM S Qrr Reverse recovery current Reverse recovery softness factor Reverse recovery charges VR = 400 V IF = 8 A dIF/dt = -200 A/s Tj = 125C 4 0.4 50 Tj = 25C Min. Typ. 13 30 5.5 A nC Max. Unit ns TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP Parameter Forward recovery time Forward recovery voltage Tests Conditions IF = 8 A dIF/dt = 100A/s, VFR = 1.1 x VFmax IF = 8 A dIF/dt = 100 A/s Tj = 25C Tj = 25C Min. Typ. Max. 200 7 Unit ns V 2/5 STTH806DTI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) = 0.05 = 0.1 = 0.2 = 0.5 100 Tj=125C (maximum values) P(W) 30 25 20 =1 Tj=125C (typical values) Tj=25C (maximum values) 15 10 10 T 5 IF(AV)(A) 0 0 1 2 3 4 5 6 7 =tp/T 8 9 tp 1 10 VFM(V) 0 1 2 3 4 5 6 7 8 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 Fig. 4: Peak reverse recovery current versus dIF/dt (typical values). IRM(A) 9 8 VR=400V Tj=125C IF=2 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) 0.8 = 0.5 7 6 0.6 5 4 = 0.2 = 0.1 0.4 3 T 2 0.2 Single pulse tp(s) 0.0 1E-3 1E-2 1E-1 =tp/T tp 1E+0 1 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 5: Reverse recovery time versus dIF/dt (typical values). trr(ns) 60 VR=400V Tj=125C Fig. 6: Reverse charges versus dIF/dt (typical values). Qrr(nC) 140 VR=400V Tj=125C 50 IF=2 x IF(AV) IF=IF(AV) 120 100 IF=2 x IF(AV) 40 IF=IF(AV) 80 IF=0.5 x IF(AV) 30 IF=0.5 x IF(AV) 60 20 40 10 20 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s) 0 0 100 200 300 400 500 3/5 STTH806DTI Fig. 7: values). S 0.6 0.5 0.4 0.3 0.2 0.1 IF<2xIF(AV) VR=400V Tj=125C Softness factor versus dIF/dt (typical Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125C). 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IRM S IF=IF(AV) VR=400V Reference: Tj=125C dIF/dt(A/s) 0.0 0 50 100 150 200 250 300 350 400 450 500 Tj(C) 25 50 75 100 125 0.0 Fig. 9: Transient peak forward voltage versus dIF/dt (typical values). VFP(V) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 Fig. 10: Forward recovery time versus dIF/dt (typical values). tfr(ns) 200 180 160 140 120 100 80 60 40 IF=IF(AV) VFR=1.1 x VF max. Tj=125C IF=IF(AV) Tj=125C dIF/dt(A/s) 50 100 150 200 250 300 350 400 450 500 20 0 0 100 dIF/dt(A/s) 200 300 400 500 4/5 STTH806DTI PACKAGE MECHANICAL DATA TO-220AC B C DIMENSIONS REF. A F b2 Millimeters 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 4.80 6.20 3.75 2.65 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 5.40 0.189 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 15.90 0.598 Inches 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.212 0.259 0.151 0.116 0.066 0.102 Min. Typ. Max. Min. Typ. Max. L a1 a2 B b1 b2 C c1 c2 e I A l4 a1 c2 l2 a2 F I I4 L M c1 15.80 16.40 16.80 0.622 0.646 0.661 b1 e l2 M Ordering code STTH806DTI s Marking STTH806DTI Package TO-220AC Weight 2.3 g. Base qty 50 Delivery mode Tube s s s Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All rights reserved. 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